| 摘要 |
An attempt is made to achieve an upward leap in the capacitance of a capacitor of MIM structure and further improvements in the reliability of a semiconductor device. A method of manufacturing a semiconductor device has a step of forming an amorphous silicon film on the surface of a lower electrode of a capacitor, a step for roughening the silicon film, to thereby form rough polysilicon, and a step for etching metal film of a lower electrode while the rough polysilicon is taken as a mask, thereby roughening the surface of the lower electrode. Through the foregoing steps, the surface of a lower electrode of a capacitor of MIM (metal/insulator/metal) structure is formed roughly, thereby increasing the surface area of the capacitor. Thus, a large-capacitance capacitor of MIM structure can be fabricated.
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