| 摘要 |
<p>The invention concerns a method for making an electronic component with self-aligned source, drain and gate, comprising the following steps: a) forming on a silicon substrate (100) a dummy gate; b) forming a source (118) and a drain (120) on either side of the dummy gate; c) self-aligned surface siliconizing of the source and drain; d) depositing at least a metal coating (130, 132), called contact coating; e) replacing the dummy gate with at least a final gate (150).</p> |
