| 摘要 |
The present invention is a vapor deposition apparatus comprising a cylindrical outer reaction tube closed on an upper end thereof; a cylindrical inner reaction tube which is disposed inside the outer reaction tube and which accommodates the loading of a stack of semiconductor substrates; a first manifold which supports the outer reaction tube and has a first injector which introduces reaction gases between the outer reaction tube and the inner reaction tube; and a second manifold which supports the first manifold and the inner reaction tube and has a second injector which introduces reaction gases into the inner reaction tube.
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