发明名称 |
Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure |
摘要 |
Methods of forming refractory metal suicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.
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申请公布号 |
US2001051427(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
US20010798404 |
申请日期 |
2001.03.02 |
申请人 |
HU YONGJUN;TRIVEDI JIGISH D. |
发明人 |
HU YONGJUN;TRIVEDI JIGISH D. |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
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