| 摘要 |
<p>A semiconductor device capable of increasing the stability of high-speed operation of a circuit by reducing a parasitic capacity and having at least two or more upper and lower layers of wires (1, 2) for connecting elements to each other installed on a silicon substrate having the elements provided thereon, characterized in that columns (3, 4) connected to a lower surface (2d) of the upper layer wire (2) and supporting the upper layer wire (2) are formed, and a space (5) continuing from a clearance (arrow 5a) between the lower layer wires (2) to at least a part of the lower surface (2d) (arrows 5b, 5c) of the upper layer wire (2) is formed.</p> |
