发明名称 |
DIAMOND AS A POLISH-STOP LAYER FOR CHEMICAL-MECHANICAL PLANARIZATION IN A DAMASCENE PROCESS FLOW |
摘要 |
A method of using diamond or a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate using a damascene process flow. The diamond or diamond-like carbon layer is deposited onto the surface of the substrate before patterning the metal level. A protective layer is then deposited over the diamond or diamond-like carbon polish-stop layer, wherein such protective layer may act as an additional polish-stop layer. Together, the diamond or diamond-like carbon polish-stop layer and the protective layer are used as a hard-mask for patterning the trenches that will become the metal features, wherein such protective layer protects the diamond or diamond-like carbon polish-stop layer during the patterning process. After deposition of a conductive metal layer, the dielectric substrate is polished to remove excess conductive material, as well as topography. In the polishing process, the diamond or diamond-like carbon polish-stop layer and any remaining protective layer are used as polish-stop layers. The diamond or diamond-like carbon polish-stop layer allows for an improved planar surface, thereby resulting in an sufficient decrease in topography at the surface of the inter-level dielectric. |
申请公布号 |
WO0195382(A2) |
申请公布日期 |
2001.12.13 |
申请号 |
WO2001US18539 |
申请日期 |
2001.06.07 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER, LAWRENCE, A.;HSU, LOUIS;STEPHENS, JEREMY, K.;WISE, MICHAEL |
分类号 |
H01L21/76;H01L21/285;H01L21/304;H01L21/306;H01L21/308;H01L21/3105;H01L21/311;H01L21/3205;H01L21/321;H01L21/762;H01L21/768 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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