发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE
摘要 <p>A semiconductor device capable of increasing the stability of high-speed operation of a circuit by reducing a parasitic capacity and having at least two or more upper and lower layers of wires (1, 2) for connecting elements to each other installed on a silicon substrate having the elements provided thereon, characterized in that columns (3, 4) connected to a lower surface (2d) of the upper layer wire (2) and supporting the upper layer wire (2) are formed, and a space (5) continuing from a clearance (arrow 5a) between the lower layer wires (2) to at least a part of the lower surface (2d) (arrows 5b, 5c) of the upper layer wire (2) is formed.</p>
申请公布号 WO0195390(A1) 申请公布日期 2001.12.13
申请号 WO2000JP08194 申请日期 2000.11.20
申请人 SUMITOMO PRECISION PRODUCTS CO., LTD.;KANAO, HIROTO;KOUNO, HIROAKI 发明人 KANAO, HIROTO;KOUNO, HIROAKI
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/320;H01L21/764 主分类号 H01L21/768
代理机构 代理人
主权项
地址