发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE |
摘要 |
<p>A semiconductor device capable of increasing the stability of high-speed operation of a circuit by reducing a parasitic capacity and having at least two or more upper and lower layers of wires (1, 2) for connecting elements to each other installed on a silicon substrate having the elements provided thereon, characterized in that columns (3, 4) connected to a lower surface (2d) of the upper layer wire (2) and supporting the upper layer wire (2) are formed, and a space (5) continuing from a clearance (arrow 5a) between the lower layer wires (2) to at least a part of the lower surface (2d) (arrows 5b, 5c) of the upper layer wire (2) is formed.</p> |
申请公布号 |
WO0195390(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
WO2000JP08194 |
申请日期 |
2000.11.20 |
申请人 |
SUMITOMO PRECISION PRODUCTS CO., LTD.;KANAO, HIROTO;KOUNO, HIROAKI |
发明人 |
KANAO, HIROTO;KOUNO, HIROAKI |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/320;H01L21/764 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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