发明名称 |
Voltage detection circuit for semiconducting storage component produces voltage level detection signal from amplified difference between reference and comparison signals |
摘要 |
The circuit has an arrangement (100,200) for producing at least one reference voltage and a comparison voltage, a differential amplifier (300) for producing an amplified difference signal depending on the difference between the reference signal(s) and the comparison signal and a driver circuit (400) that receives the amplified difference signal and produces a voltage level detection signal.
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申请公布号 |
DE10106775(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
DE20011006775 |
申请日期 |
2001.02.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM, JAE-YOON;YOO, JEI-HWAN |
分类号 |
G11C5/14;G11C8/08;G11C11/4074;(IPC1-7):G11C11/407 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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