发明名称 Voltage detection circuit for semiconducting storage component produces voltage level detection signal from amplified difference between reference and comparison signals
摘要 The circuit has an arrangement (100,200) for producing at least one reference voltage and a comparison voltage, a differential amplifier (300) for producing an amplified difference signal depending on the difference between the reference signal(s) and the comparison signal and a driver circuit (400) that receives the amplified difference signal and produces a voltage level detection signal.
申请公布号 DE10106775(A1) 申请公布日期 2001.12.13
申请号 DE20011006775 申请日期 2001.02.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SIM, JAE-YOON;YOO, JEI-HWAN
分类号 G11C5/14;G11C8/08;G11C11/4074;(IPC1-7):G11C11/407 主分类号 G11C5/14
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