Method of forming cobalt silicide

摘要

A semiconductor arrangement and method of forming silicide regions includes conformally depositing a reducing material layer on a silicon substrate. A refractory metal layer is then conformally deposited on the reducing material layer. Annealing is then performed to form a refractory metal silicide layer on the silicon substrate. The metal silicide layer is a cobalt silicide and the reducing material layer includes at least one of tantalum, magnesium, aluminum or calcium. The reducing material reduces native oxide on a silicon substrate to allow the cobalt silicide to form.