发明名称 METHOD OF PREPARING ANATASE-TYPE TIO2 SINGLE CRYSTAL THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of preparing anatase-type TiO2 single crystal having characteristics such as improved efficiency of photocatalytic reaction through the enhancement of crystallinity. SOLUTION: This method utilizes laser vapor deposition onto a plain single crystal substrate such as SrTiO3 under low pressure oxygen atmosphere (10 mTorr to 100 mTorr) to form an anatase-type TiO2 single crystal thin film having controlled thickness in the range of 10 nm to 2 μm, wherein the temperature of the substrate is controlled in the range of 350 to 600 deg.C, and the pressure of oxygen is controlled in the range of 10 mTorr to 100 mTorr.
申请公布号 JP2001342022(A) 申请公布日期 2001.12.11
申请号 JP20000161743 申请日期 2000.05.31
申请人 JAPAN ATOM ENERGY RES INST 发明人 YAMAMOTO HARUYA;MIYASHITA ATSUMI
分类号 B01D53/86;B01D53/94;B01J21/06;B01J32/00;B01J35/02;B01J37/02;C01G23/07;C23C14/08;C30B23/08;C30B29/16 主分类号 B01D53/86
代理机构 代理人
主权项
地址