| 摘要 |
A contact between a polycrystalline silicon structure and a monocrystalline silicon region is produced by doping the silicon structure in amorphous or polycrystalline form and/or doping the monocrystalline silicon region with a dopant, in particular with oxygen, in such a concentration that a solubility limit is exceeded. In a subsequent heat treatment, dopant precipitations are formed which either control grain growth in the polycrystalline silicon layer or prevent a propagation of crystal faults into a substrate in the monocrystalline silicon region. Such a contact can be used, in particular, as a buried strap in a DRAM trench cell.
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