发明名称 |
Laser diode having separated, highly-strained quantum wells |
摘要 |
A semiconductor laser device with separated, highly-strained quantum wells employs highly-strained ternary and quasi-ternary compounds as material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds with compositions outside of the miscibility gap of corresponding quaternary compounds for quantum wells in GaSb- or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 mum range. The semiconductor diode laser may be formed so as to operate having a multi-mode or single-mode radiation.
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申请公布号 |
US6330263(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US19980106705 |
申请日期 |
1998.06.29 |
申请人 |
SARNOFF CORPORATION |
发明人 |
GARBUZOV DMITRI ZALMANOVICH;CONNOLLY JOHN CHARLES;KHALFIN VIKTOR BORISOVICH;LEE HAO |
分类号 |
H01S5/34;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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