| 摘要 |
A method of forming a generally conformal iridium layer (preferably, an iridium metal layer optionally containing oxides of iridium) on a substrate, such as a semiconductor wafer, using complexes of the formula CpIr(CO)2 wherein Cp is a substituted or unsubstituted cyclopentadienyl ligand; and forming a generally conformal iridium layer on a surface of the substrate, wherein the layer is formed from the precursor composition in the presence of one or more carrier gases and one or more oxidizing gases.
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