发明名称 |
Merged sidewall spacer formed between series-connected MOSFETs for improved integrated circuit operation |
摘要 |
An improved series-connected transistor architecture and a method for forming the same are provided. Gate conductors for series connected transistors are patterned such that gate conductors on either side of a merged source/drain region which will not be contacted in the completed circuit are spaced more closely together than other gate conductors. In an embodiment of the method, these closely-spaced gate conductors have a spacing between facing sidewalls of less than about twice the expected sidewall spacer width for the process. After a first dopant impurity introduction, a conformal dielectric layer is deposited and portions of the dielectric layer are removed to form sidewall spacers. In the region between the closely-spaced gate conductors, the spacers are merged to form a continuous dielectric. This dielectric protects the substrate between the closely-spaced gate conductors from subsequent impurity introduction and salicide processes. In an alternate embodiment, dielectrics are formed between and adjacent to all gate conductors using dielectric deposition and chemical-mechanical polishing. All dielectrics except those between the closely-spaced gate conductors are subsequently removed, and spacers are formed on exposed sidewalls of the gate conductors.
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申请公布号 |
US6329695(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US19990227515 |
申请日期 |
1999.01.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
DUANE MICHAEL P.;BOURLAND STEVEN E. |
分类号 |
H01L21/8234;H01L27/088;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8234 |
代理机构 |
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主权项 |
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地址 |
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