发明名称 Transient current producing method, transient current producing circuit, related semiconductor integrated circuit and logical circuit
摘要 A transient current producing method, a transient producing circuit, a related semiconductor integrated circuit and logical circuit are provided, which are capable of preventing a flow of a steady state current, consuming little power and switching at high speed. A transient current occurring at a time of switching of a CMOS circuit is amplified to a predetermined value. This amplification prevents the flow of the steady state current in the circuit. The transient current occurring at the time of switching of the CMOS circuit is converted to a transient voltage. The conversion of the transient current to the transient voltage having a predetermined value and the amplification of the transient current allow a simple configuration of the circuit. The transient current is a feedthrough current which flows from a terminal of a power supply to a ground at the time of switching of the CMOS circuit. The transient current can be a transient current which flows from the power supply to an output terminal of the CMOS circuit at the time of switching of the CMOS circuit and also can be a transient current which flows from the output terminal to the ground.
申请公布号 US6329866(B1) 申请公布日期 2001.12.11
申请号 US20000492075 申请日期 2000.01.27
申请人 NEC CORPORATION 发明人 WATARAI SEIICHI
分类号 H03K17/04;H03K17/567;H03K19/00;H03K19/003;H03K19/08;(IPC1-7):H03K17/16 主分类号 H03K17/04
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