| 摘要 |
A circuit (20) includes a resistor (26) and a current source (32) for raising the voltage of the source of the N-channel transistor in order to keep the base-emitter voltage of the parasitic bipolar device from forward biasing to prevent conduction in the parasitic bipolar device. In one embodiment, a relatively small resistor (26) is coupled between the source of an N-channel transistor (24) and ground. The current source (32) is used to direct some of the ESD current from a positive ESD event through the small source resistor (26) so that the source of the N-channel transistor (24) is elevated during the event, thus preventing snapback of the parasitic bipolar device.
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