发明名称 Synchronous DRAM modules including multiple clock out signals for increasing processing speed
摘要 Additional clock-outs are included on DRAMs in a multiple Dual In-Line Module Memory (DIMM) system having DRAMs of different data widths. The additional clock-outs balance the loads seen by the DRAM clock-out and data-out, thereby reducing signal skew between the DRAM data and clock lines. Additionally, in a second embodiment, every other clock line in a series of DRAMs comprising a DIMM are left unconnected. The data from the non connected DRAMs is clocked using the clock line of its neighbor.
申请公布号 US6330637(B1) 申请公布日期 2001.12.11
申请号 US19990290420 申请日期 1999.04.13
申请人 MICRON TECHNOLOGY, INC. 发明人 RYAN KEVIN J.
分类号 G06F13/16;G11C5/00;G11C7/10;(IPC1-7):G06F12/00;G06F13/00 主分类号 G06F13/16
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