发明名称 |
Method of improving the texture of aluminum metallization for tungsten etch back processing |
摘要 |
A method of making connection between an aluminum or aluminum based material and tungsten. The method includes providing an underlying region containing a layer of tungsten thereover. The underlying region is preferably a layer of titanium over which is a layer of titanium nitride. The layer of tungsten is etched back to the underlying region while exposed tungsten is retained over a portion of the underlying region. The underlying region also may contain a via therein which contains the exposed tungsten. An nitrogen-containing plasma, preferably elemental nitrogen, is then applied to the exposed tungsten and exposed underlying region and a layer of a barrier material is formed by reaction of the nitrogen in the plasma and the tungsten over the exposed tungsten. A further barrier layer, preferably titanium nitride, is optionally then applied followed by a layer of aluminum over the exposed surface, the barrier layer isolating the layer of aluminum from the tungsten. Plasma is preferably an argon/nitrogen plasma.
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申请公布号 |
US6329282(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US19990349624 |
申请日期 |
1999.07.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HSU WEI-YUNG;HONG QI-ZHONG |
分类号 |
H01L21/768;H01L21/28;H01L21/321;H01L21/4763;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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