| 摘要 |
A nonvolatile memory device having a lightly doped source and a method for manufacturing the same are provided. In the nonvolatile memory device, a first insulating layer, a floating gate, a second insulating layer and a control gate are sequentially formed on a semiconductor substrate, and a drain, a lightly doped source and a highly doped source are formed around a surface of the semiconductor substrate. At this time, the highly doped source is shallower than the drain without being overlapped by the floating gate. Thus, the integration of the memory cell can be increased, and the trapping of electrons is reduced in the first insulating layer formed between the floating gate and the lightly doped source, to thereby enhance the characteristics of the memory cell.
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