发明名称 Magnetoresistive element and method of forming the same
摘要 A ferromagnetic tunnel junction structure includes an anti-ferromagnetic layer; a first ferromagnetic layer in contact with the anti-ferromagnetic layer; a tunnel barrier layer in contact with the first ferromagnetic layer; a second ferromagnetic layer in contact with the tunnel barrier layer so that the tunnel barrier layer is sandwiched between the first and second ferromagnetic layer, the second ferromagnetic layer includes at least a high polarization layer and at least a soft magnetic layer so that the high polarization layer is positioned closer to the tunnel barrier layer than the soft magnetic layer.
申请公布号 US6329078(B1) 申请公布日期 2001.12.11
申请号 US19980182896 申请日期 1998.10.30
申请人 NEC CORPORATION 发明人 TSUGE HISANAO
分类号 G11B5/39;G11B5/66;G11C11/15;H01F10/08;H01F10/16;H01F10/32;H01L43/08;(IPC1-7):G11B5/39 主分类号 G11B5/39
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