发明名称 Method for fabricating a thin-film transistor
摘要 A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
申请公布号 US6329226(B1) 申请公布日期 2001.12.11
申请号 US20000585159 申请日期 2000.06.01
申请人 AGERE SYSTEMS GUARDIAN CORP. 发明人 JONES CHRISTOPHER D. W.;MURPHY DONALD W.;ROGERS JOHN A.;TATE JENNIFER;SLUSHER RICHART E.
分类号 H01L21/316;H01L21/336;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L21/00;H01L21/84 主分类号 H01L21/316
代理机构 代理人
主权项
地址