发明名称 |
Method for fabricating a thin-film transistor |
摘要 |
A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
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申请公布号 |
US6329226(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US20000585159 |
申请日期 |
2000.06.01 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
JONES CHRISTOPHER D. W.;MURPHY DONALD W.;ROGERS JOHN A.;TATE JENNIFER;SLUSHER RICHART E. |
分类号 |
H01L21/316;H01L21/336;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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