发明名称 |
Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same |
摘要 |
A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from the function of a nitrogen-containing metal film with high melting point which prevents fluorine dispersion, to prevent such problems as the reaction of a metal and fluorine at heating process and the following falling or swelling of the metal film can be solved. In addition, the heating process possible to introduce in the manufacturing steps allow to complete the LSI making process of a practical multilayer wiring structure on the basis of a low dielectric constant of amorphous carbon.
|
申请公布号 |
US6329295(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US20000594037 |
申请日期 |
2000.06.15 |
申请人 |
NEC CORPORATION |
发明人 |
MATSUBARA YOSHIHISA;ENDO KAZUHIKO |
分类号 |
H01L21/3205;H01L23/532;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|