发明名称 Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure
摘要 A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, preseeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas phase. The diamond layer is provided with thin spots between the devices. According to the invention, the devices are laid down initially on a growth substrate directly and/or with the use of the material of the growth substrate. Following the deposition of the devices, the latter are seeded on their free surfaces for the diamond layer. The diamond layer is located on the seeded free surfaces of the devices.
申请公布号 US6329674(B1) 申请公布日期 2001.12.11
申请号 US20000590007 申请日期 2000.06.09
申请人 DAIMLERCHRYSLER AG 发明人 KONRAD BRIGITTE;GUETTLER HERBERT
分类号 C30B29/04;H01L21/20;H01L21/205;H01L21/31;H01L21/314;H01L27/00;(IPC1-7):H01L31/031;H01L29/06;H01L31/033 主分类号 C30B29/04
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