| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor wafer using a double surface polisher for increasing the flatness of the semiconductor wafer by preventing a sagging by polishing at the outer peripheral part of the wafer. SOLUTION: During polishing, a big difference between a frictional resistance acting on the surface of the silicon wafer W from an upper surface plate 12 side and that acting on the rear surface of the wafer from a lower surface plate 13 side is given comparing with conventional method. This is because a hard foam urethane foam pad 14 and a soft unwoven cloth pad 15 are used for providing different frictional resistance against the wafer W. Each wafer W thus turns in a wafer holding hole 11a at a speed of as high as 0.1 to 1.0 rpm. As a result, even if a defect occurs during the polishing, the turning of the wafer W will not stop. In addition, an unevenly polished amount is hard to occur partly at the outer peripheral part of the wafer. Thus, a sagging by polishing can be suppressed to increase the flatness of the wafer W. |
