发明名称 |
Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
摘要 |
The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.
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申请公布号 |
US6329272(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US19990332059 |
申请日期 |
1999.06.14 |
申请人 |
TECHNOLOGIES LTRIM INC. |
发明人 |
GAGNON YVES;MEUNIER MICHEL;SAVARIA YVON |
分类号 |
H01L27/04;H01C17/242;H01L21/02;H01L21/22;H01L21/268;H01L21/822;H01L27/08;(IPC1-7):H01L21/22 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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