Method of forming self-aligned contacts

摘要

The invention advantageously provides a novel method for making self-aligned contacts on a semiconductor substrate. A gate electrode having a vertical sidewall and a protecting layer thereon is formed over the semiconductor substrate. A doped region is formed in the substrate adjacent to the gate electrode. An insulating sidewall spacer is formed on the sidewall of the gate electrode. A second doped region is formed in the substrate adjacent to the sidewall spacer. A second protecting layer is formed to cover or blanket the first protecting layer, the sidewall spacer, and the substrate. An interlayer insulting layer is provided on the second protecting layer in order to form a planer surface. The interlayer insulating layer and the second protecting layer are etched to expose the doped regions to form the self-aligned contacts.