发明名称 |
Mm-wave/IR monolithically integrated focal plane array |
摘要 |
An integrated infrared and millimeter-wave monolithic focal plane sensor array having a substrate upon which an integrated array of infrared sensors and mm-wave sensors are provided at a first planar level on the same side of the substrate, and a planar antenna for receiving incident millimeter-wave radiation located at a second planar level located between the integrated array of sensors and the surface of the substrates for coupling the mm-wave radiation field to the mm-wave sensor. The antenna receiver of electromagnetic radiation, in one embodiment, is an antenna having a crossed bowtie configuration which efficiently couples the radiation field to the mm-wave sensor. The invention also is directed to a method of fabricating such a radiation sensor.
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申请公布号 |
US6329649(B1) |
申请公布日期 |
2001.12.11 |
申请号 |
US19990414988 |
申请日期 |
1999.10.07 |
申请人 |
RAYTHEON COMPANY |
发明人 |
JACK MICHAEL D.;GRINBERG JAN;DOLEZAL FRANKLIN A.;BALCERAK RAY |
分类号 |
G01J5/20;G01J5/34;G01R29/08;H01Q1/22;H01Q3/26;H01Q9/28;H01Q21/00;H01Q21/24;(IPC1-7):G01R23/02;G01J5/00 |
主分类号 |
G01J5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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