METHOD FOR FORMING FERROELECTRIC CAPACITOR OF SEMICONDUCTOR DEVICE,申请号KR20000029639-传众专利搜索

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发明名称	METHOD FOR FORMING FERROELECTRIC CAPACITOR OF SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20010108748(A)	申请公布日期	2001.12.08
申请号	KR20000029639	申请日期	2000.05.31
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHO, JUN HUI;SUL, YEO SONG
分类号	(IPC1-7):H01L27/105	主分类号	(IPC1-7):H01L27/105
代理机构		代理人
主权项
地址

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