METHOD FOR REDUCING SLIP IN THIN FILM ON CUBIC SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a thin film of 3C-SiC single crystal growing of silicon carbide(SiC) crystal on an Si substrate by using a chemical vapor deposition(CVD) method. SOLUTION: This method is a method for depositing the thin film of cubic silicon carbide (3C-SiC) single crystal on the Si substrate by the CVD method. In this method, the slip to be introduced into the 3C-SiC grown on the substrate can be reduced by using the grooves Si substrate.