发明名称 METHOD FOR PRODUCING GAS BARRIABLE FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a film excellent in gas barrier properties and transparency. SOLUTION: In a sputtering system obtained by providing a pair of targets so as to face each other, the presusre of an inert gas in the system is controlled to <=0.5 Pa, voltage is applied on the space between the targets to form a plasma space in which target atoms are scattered on the space part between the the targets, and the target atoms are deposited on a film at a film thickness of 5 to 200 nm.
申请公布号 JP2001335926(A) 申请公布日期 2001.12.07
申请号 JP20000152241 申请日期 2000.05.24
申请人 NIPPON SYNTHETIC CHEM IND CO LTD:THE 发明人 KAMIMURA TOMOYUKI
分类号 C08J7/06;B32B9/00;C23C14/34;(IPC1-7):C23C14/34 主分类号 C08J7/06
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