| 摘要 |
PURPOSE: To provide a method of manufacturing a semiconductor device provided with an element isolation insulating film, where the surface of a substrate is covered with an oxidation-resistant film such as a nitride film or the like until the oxidation of a gate is started so as to prevent a useless oxide film from being formed on the substrate when a gate oxide film of different thickness is formed, and etching carried out before the oxidation of a gate can be reduced. CONSTITUTION: In this manufacturing method, a semiconductor substrate 100 is equipped with element regions 501 and 502 where element isolation oxide films 101 and thin oxide films 201 each located on an active region between the oxide films 101, an oxidation-resistant film 301 is formed on all the surface of the semiconductor substrate 100, the semiconductor substrate 100 is exposed using a resist film 401 as a mask, where the element region 501 is not covered with the resist film 401, a first gate oxide film is formed, furthermore the semiconductor substrate 100 is exposed using a resist film where the element region 502 is open as a mask, and a second gate oxide film is formed.
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