发明名称 PRODUCING METHOD OF BLANKS FOR PHOTOMASK AND METHOD FOR PRODUCING PHOTOMASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a film which has high uniformity of optical characteristic in the surface of substrate. SOLUTION: This method for producing blanks for photomask is provided with a target and a substrate which is disposed on the position opposed to the target and is the object to be film-formed in a chamber and enables the reactive sputtering by supplying sputtering gases including a reactive gas into the chamber. This method for producing blanks for photomask is further characterized by that a target which is perforated with gas emitting holes communicated with a gas supplying pipe is used as the target and the reactive sputtering is performed while supplying the sputtering gas including the reactive gas toward the substrate through the gas emitting holes of the target.</p>
申请公布号 JP2001337437(A) 申请公布日期 2001.12.07
申请号 JP20000155781 申请日期 2000.05.26
申请人 SHIN ETSU CHEM CO LTD 发明人 KANEKO HIDEO;INAZUKI SADAOMI;OKAZAKI SATOSHI
分类号 G03F1/50;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/50
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