| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric capacitor which is possessed of a small leakage current, excellent in reliability, and manufactured with its yield high. SOLUTION: A ferroelectric film precursor is deposited on the lower electrode of a capacitor and subjected to a thermal process through a manner in which the film precursor is heated at a high temperature rise rate till it reaches a temperature higher than its crystallization temperature, the precursor is kept at the above temperature for a short time for crystallization. The above thermal process is carried out several times for the crystallization of the film precursor. By these processes, a dense and flat dielectric film having large crystal grains can be obtained. |
