| 摘要 |
PROBLEM TO BE SOLVED: To reduce overvoltage and loss by reducing internal inductance (parasitic inductance in wiring) of power semiconductor elements. SOLUTION: A current route from a positive electrode of a DC power supply source to a negative electrode of the DC power supply source through power semiconductor elements IGBT 191B, 201B which constitute an upper arm of a three-phase inverter and power semiconductor elements IGBT 192B, 202B which constitute a lower arm of the three phase inverter is approximately composed in a U shape. |
