| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor light emitter which can enhance the efficiency in light emission and reduce the manufacture cost, and besides whose overall structure can be downsized. SOLUTION: In a semiconductor light emitter, a plurality of light emitting elements 15 being constituted by laminating compound semiconductor layer 8 of one conductivity type and a compound semiconductor layer 9 of the opposite conductivity type sequentially, a plurality of output transistors 18 for controlling the power supply to these light emitting elements 15, a silicon semiconductor element 2 having an activated region consisting of silicon, source and drain electrodes 4 and 5, and a gate electrode 3 supply the above output transistor 18 with a drive signal, are juxtaposed. The output transistor 18 is made of a compound semiconductor layer 9 of the opposite conductivity type of the same quality as the light emitting element 15. |
