| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor exposure method and a semiconductor manufacturing apparatus wherein a semiconductor wafer in a pattern dimension of high dimensional accuracy can be manufactured in a short time, by setting a proper light exposure so as to comply in real time with a change in the pattern dimension. SOLUTION: A control part 11 in a system 101 measures the dimension by dimension measuring devices 105, 106 on the basis of the drawn time of a photoresist until a required pattern is exposed on the photoresist in an exposure and developing device 103, after the semiconductor wafer is coated with the photoresist in a photoresist coating device 102. It computes a remaining dimension change amount. It computes the proper light exposure on the basis of information obtained from the semiconductor wafer treated until immediately before the semiconductor wafer is exposed and on the basis of the remaining dimension change amount. It is possible to deal in real time with an irregularity or a change in the drawn time of the photoresist, the change in the pattern dimension is suppressed, and the semiconductor wafer in the pattern dimension of high dimensional accuracy can be manufactured in a short time. |
