| 摘要 |
PROBLEM TO BE SOLVED: To plasma ash a resist where a surface altered layer is formed without the occurrence of popping and in a short time. SOLUTION: A wafer 6 is held on a stage 1 that is heated and is maintained at a fixed temperature via an interposed clearance, and while the temperature of the wafer 6 is risen, the altered layer is removed by plasma ashing. An ashing time can be shortened because the temperature rise and fall of the stage 1 is unnecessary. As the altered layer is removed at a relatively low temperature during the temperature rise, the popping does not occur. After the altered layer has been removed, the wafer 6 is mounted on the stage 1 and a temperature rising rate of the wafer 6 is increased. Thus, the ashing time can be further shortened. |
