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发明名称
NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
申请公布号
KR20010107127(A)
申请公布日期
2001.12.07
申请号
KR20000028366
申请日期
2000.05.25
申请人
HYNIX SEMICONDUCTOR INC.
发明人
KIM, HEUNG JIN
分类号
G11C16/04;H01L21/336;H01L27/115;(IPC1-7):H01L27/115
主分类号
G11C16/04
代理机构
代理人
主权项
地址
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