发明名称 ELECTROPLATING METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress the change of properties of a black film formed on an anode. SOLUTION: An upwardly directed wafer 101 is placed on a support base 102. The wafer 101 is formed by successively depositing a Ta film and a Cu film on a Si substrate. A cathode contact 103 to give the cathodic electric potential is connected to the surface of the wafer 101. An impregnated sponge 106 containing electrolyte and a flat phosphor-containing copper anode 105 with the impregnated sponge 106 adhered thereto are arranged facing the surface of the wafer 101. The anode is connected to a power source 111. The anode 105 and the impregnated sponge 106 are movable by the motion of an arm 107, and the anode 105 and the impregnated sponge 106 can be retracted to a retracting position B separate from a plating position A. A container 108 filled with the electrolyte 110 is installed at the retracting position B. In addition, a metal pseudo cathode 109 is installed in the container 108.
申请公布号 JP2001335992(A) 申请公布日期 2001.12.07
申请号 JP20000150253 申请日期 2000.05.22
申请人 TOSHIBA CORP;EBARA CORP 发明人 MATSUDA TETSURO;KANEKO HISAFUMI;MISHIMA KOJI;MAKINO NATSUKI;KUNISAWA JUNJI
分类号 C25D5/06;C25D7/12;C25D17/10;C25D17/14;C25D21/12;H01L21/288;(IPC1-7):C25D17/10 主分类号 C25D5/06
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