| 摘要 |
PURPOSE: To suppress distribution of polishing rate of an oxide film, which depends on the width of an element isolation region, and to form the element isolation region without using dummy AC (active regions). CONSTITUTION: A process for forming a mask layer on a substrate 10, a groove- forming process for forming grooves for element isolation region 18 at desired depths in the mask layer and a substrate positioned below the mask layer, a process for forming an insulating film 20 on a region 12 where the grooves and the mask layer remain, a planarizing process for polishing the insulating film until the surface of the region where the mask layer remains and a process for removing regions where the mask layer remains are contained. A process for forming a nitride film pattern 22 on the upper side of the groove 18b, whose minimum width is not less than prescribed width among the grooves, is included between the process for forming the insulating film and the planarizing process.
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