CONTACT ETCHING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the contact etching method of a semiconductor device for distinguishing the fail of a semiconductor device by a normal wafer test. SOLUTION: After a contact hole is formed on a semiconductor device that is formed on the surface Si layer of an SOI substrate having a buried oxide film and the surface Si layer in this order on a support substrate by dry etching, dry etching is made under different conditions, and the buried film is removed if the contact hole may have penetrated the surface Si layer, thus judging the semiconductor device including the penetrated part to be faulty by the contact etching method of the semiconductor device.