| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device small in a level difference between MODFET and the other element and capable of high speed operation suitable for minute processing. SOLUTION: A side forms the true parts 8, 9 on a semiconductor board 1 by an insulation film 7, a bottom face forms the groove of single crystal silicon 1, and formation is performed by making selection growth in the groove. The level difference with the other element mixed-loaded on the same board can be eliminated, and high integration is enabled. At the same time, elimination length can be shortened, and low consumption power is enabled.
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