| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is improved by allowing each fluorine-containing agent in an etching environment to have the specific ratio of fluorine atoms to atoms other than fluorine, and executing etching with a specific pressure, or executing etching with specific power density. CONSTITUTION: The method is for manufacturing a semiconductor device by forming a substantially vertical edge part in or on a substrate (30), forming a first layer on the substrate (30) along the substantially vertical edge part, and forming a spacer (42) by etching the first layer. In this case, each fluorine- containing agent has a ratio of at least five fluorine atoms per atoms other than fluorine, and the etching is carried with a pressure which is about 500 millitorrs or lower, or the etching is carried with power density which is about 0.75 W/cm¬2 or lower.
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