| 摘要 |
PROBLEM TO BE SOLVED: To process the groove of a high aspect ratio on the methylsiloxane- based film of low dielectric constant without producing continuity inferiority due to shape deterioration even in the case that lower layer wiring is covered by an etching protection film. SOLUTION: A laminated film forming an oxidation silicon-based film 7 is formed on the upper layer of the methylsiloxane-based film 6, and is processed by means of a hard mask 8. When the etching protection film 5 is etched, the oxidation protection silicon-based film 7 acts as the hard mask of the methylsiloxane-based film 6, and the parasitic capacity of multi-layer wiring can be reduced without producing breaking and short circuit inferiority because shoulder omission is prevented from transferring to the methylsiloxane-based film 6. |
