发明名称 PZT CRYSTAL FILM ELEMENT AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a PZT crystal film element which has high moisture- resistant properties, high insulation resistance, and a low dielectric loss and is used for an electronic part such as a capacitor, an actuator or the like. SOLUTION: A PZT crystal film of Pb(ZrxTi1-x)O3 (0<=x<=1) is formed through a hydrothermal synthesis method on a substrate, where the hydrophilic part of the PZT crystal film is covered with polymerized or crosslinked adhesive resin, then a thin film electrode is formed on the PZT crystal film and/or the adhesive resin, and the thin film electrode is covered with polymerized or crosslinked adhesive resin. Thus, a PZT crystal film element and its manufacturing method can be obtained.</p>
申请公布号 JP2001338835(A) 申请公布日期 2001.12.07
申请号 JP20000156623 申请日期 2000.05.26
申请人 UBE IND LTD 发明人 HASHIMOTO TOMONORI
分类号 C01G25/02;H01G4/12;H01G4/33;H01L21/822;H01L27/04;H01L41/23;H01L41/29;H01L41/317;H01L41/39;(IPC1-7):H01G4/33;H01L41/24 主分类号 C01G25/02
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