| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device provided with the floating gate electrode of high electric charge retaining capability and its manufacturing method. SOLUTION: Nitrogen is diffused to form a nitrogen containing silicon oxidation film 4x by performing heat treatment of 1050 deg.C for the silicon oxidation film formed on the active area 3 of a well 1a in an N2O atmosphere. After an ONO film is sandwiched to deposit two polysilicon films, patterning is performed, a memory gate electrode 8 comprising a floating gate electrode 5, an inter-electrode insulation film 6 and a control gate electrode 7 is formed on a tunnel insulation film 4, and a selection gate electrode part 18 is formed sideward thereof. A p-type source diffusion layer 10, a p-type drain diffusion layer 11 and an intermediate layer 12 are formed sideward of each electrode part 8, 18. Since the local area of the tunnel insulation film is passed to inject electrons, an area capturing the hole of the tunnel insulation film can be restricted.</p> |
