PATTERN DESIGNING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT, PHOTOMASK AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the deformation of a transfer pattern caused by an exposure process and to transfer the pattern in accordance with a design on a wafer. SOLUTION: In this pattern designing method of semiconductor integrated circuit, respective opening pattern shapes of plural contact holes are made rectangular and the contact holes are formed in such a manner that the long sides of rectangles of the respective opening patterns are arranged in an adjacent relation one another, moreover, the positions of both ends of the respective long sides are aligned, thereby allows the pattern on a photomask to perform the optical proximity correction easily and exactly.