| 摘要 |
PROBLEM TO BE SOLVED: To provide a high resolution resist material containing an acid generating agent having high sensitivity to ArF excimer laser light and excellent in thermal stability and shelf stability and to provide a method for forming pattern using the resist material. SOLUTION: In the resist material containing a base resin, an acid generating agent and a solvent, the acid generating agent is a sulfonium salt of formula (1) (where R1 is a 3-20C monovalent cyclic hydrocarbon group and may be a bridged cyclic hydrocarbon group R2 is hydroxyl, nitro, halogen or a linear, branched or cyclic monovalent hydrocarbon group which may contain O, N, S or halogen; K- is a non-nucleophilic counter ion; (x) is an integer of 1 or 2; and (y) is an integer of 0-3). The resist material is sensitive to ArF excimer laser light, is excellent in sensitivity and resolution and can easily form a fine pattern perpendicular to a substrate because it can be formed in a thick film and is advantageously used in etching. |
