| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose electric characteristics are improved. SOLUTION: A semiconductor chip 24 is buried in a chip burying part 12 of a semiconductor chip 14, and an FET 10 formed in the semiconductor chip 14 and a PIN diode 20 formed in the semiconductor chip 12 are connected by a wiring layer 30. The FET 10 of the semiconductor chip 14 and the PIN diode 20 of the semiconductor chip 24 are formed in separate process and formed to desired characteristics, respectively. Accordingly, a semiconductor device 100 also can have desired characteristics, thus improving characteristics of the semiconductor device 100. |
