| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a wiring device in which the selective deposition of copper by an electroless plating method can be performed. SOLUTION: The wiring device 5 contains a substrate 1, catalytic nuclei 2 adhered to the surface of the substrate 1, a wiring 4 formed on the substrate 1 adhered with the catalytic nuclei 2 and insulating films 3 formed on the regions other than those formed with the wiring 4 in the surface of the substrate 1 adhered with the catalytic nuclei 2. The wiring 4 is composed of copper. The catalytic nuclei 2 are composed of an alloy consisting of platinum and palladium. The amount of the catalytic nuclei 2 is controlled to the range by which the intergranular distance between the adjacent catalytic nuclei 2 is made larger than the grain size of the catalytic nuclei 2. The method for producing the wiring device 5 is as follows. The catalytic nuclei 2 are adhered to the substrate 1 by a sputtering method. The insulating films 3 are formed on the substrate 1. The insulating films 3 are subjected to patterning by a photolithography method, a part of the insulating films 3 is removed to form grooves, and the catalytic nuclei 2 are exposed. The metallic films 4 are formed on the grooves in which the catalytic nuclei 2 are exposed by electroless plating.
|
